Journal: Materials Characterization

Article Title: Space rocks and optimising scanning electron channelling contrast

doi: 10.1016/j.matchar.2018.06.001

Figure Lengend Snippet: Fig. 3. Forescatter diode (FSD) imaging with varying detector tilt. (a) At low detector tilt, contrast is optimised to reveal surface topography, demonstrating black-white contrast (a-i and a-ii) either side of a preferentially polished region of the FCC phase, and objects are located on the top of the surface show the ‘RGB’ plume artefact due to preferential shadowing of electrons for each diode use to form the red, blue, and green diodes. As the detector is tilted towards higher screen positions as compared to the sample (b and c) the topography contrast is suppressed and the orientation contrast between grains and between sub-grains increases. Inserts are of higher magnification regions and examples of raw EBSD patterns are given to indicate the relative position of the detector and the incident electron signal. (For interpretation of the references to colour in this figure legend, the reader is referred to the web version of this article.)

Article Snippet: Forescatter electron imaging was captured using the ARGUS imaging system, mounted on a Bruker e-Flash FS EBSD detector and EDS data was acquired using a Bruker XFlash 6|60 detector.

Techniques: Imaging

Journal: Materials Characterization

Article Title: Space rocks and optimising scanning electron channelling contrast

doi: 10.1016/j.matchar.2018.06.001

Figure Lengend Snippet: Fig. 4. Forescatter diode (FSD) imaging with varying detector distance. (a) The ‘near’ position has a detector approx. 15 mm from the sample, (b) ‘medium’ at 20 mm, and (c) ‘far’ at 25 mm. Contrast in the near condition is strongly dominated by topography, and the far condition (for this detector tilt) high- lights contrast for the crystal orientation. Inserts are of higher magnification regions and an example EBSD pattern to indicate the relative position of the detector and the incoming electron signal.

Article Snippet: Forescatter electron imaging was captured using the ARGUS imaging system, mounted on a Bruker e-Flash FS EBSD detector and EDS data was acquired using a Bruker XFlash 6|60 detector.

Techniques: Imaging

Journal: Materials

Article Title: Epitaxial Growth of Silicon on Silicon Wafers by Direct Laser Melting

doi: 10.3390/ma13214728

Figure Lengend Snippet: Electron backscatter diffraction (EBSD) mapping of pillars built with pulse energy of 161 mJ, laser pulse duration of 1 ms, stage speed 0.0167 mm/s, frequency of 200 Hz and powder feed rate of 1.0 g/min on a Si <111> wafer shown in dark blue color ( a ) and on a <100> substrate shown in red color ( b ) A higher powder feed rate (15 g/min) with otherwise identical conditions resulted in polycrystalline growth ( c ). The inverse pole figure (IPF) color scale shows the crystal orientations in the pillar growth direction . The corresponding SEM pictures ( d – f ), including the marked grain boundaries, reveal some deposition defects, post-deposition sample preparation cracks and polishing scratches.

Article Snippet: Characterization of the crystalline orientation of the grown material with respect to the wafer was then implemented by an electron backscatter diffraction (EBSD) detector (TSL, TexSEM Laboratories, Inc., Provo, UT, USA) mounted in a scanning electron microscope (SEM) chamber (DSM 962, Zeiss, Munich, Germany).

Techniques: Sample Prep